Spin photodiodes for the detection of circularly polarized light

Spin photodiodes for the detection of circularly polarized light

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Institut Jean Lamour

Organisation/Company Institut Jean Lamour Department Department P2M Research Field Physics » Electronics Physics » Optics Physics » Applied physics Researcher Profile First Stage Researcher (R1) Positions Postdoc Positions Application Deadline 3 Jan 2027 - 23:59 (Europe/Paris) Country France Type of Contract Temporary Job Status Full-time Hours Per Week 35 Offer Starting Date 4 Jan 2027 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

Solid-state detectors capable of directly sensing light helicity are essential components for polarization-encoded optical communication and circular-polarimetric imaging. Spin photodiodes (spin PDs) based on ferromagnet/tunnel-barrier/semiconductor heterostructures offer a promising approach for direct helicity detection. A spin PD can be regarded as the reverse operation of a spin-light emitting diode (spin-LED): circularly polarized light generates spin-polarized carriers in the semiconductor, which are electrically detected through spin-dependent tunneling.

Although major advances have been achieved in recent years by our group in the development of spin-LEDs, including circular polarization degrees of approximately 40% at room temperature and electrical switching of magnetization, and consequently of the polarization of light [1], relatively little research has focused on the development of spin photodiodes. We have recently demonstrated that a Ge-based spin photodiode can operate without an externally applied magnetic field at wavelengths relevant to optical telecommunications [2]. However, the spin-dependent photocurrent asymmetry still less than 1%. The goal of the post-doc is to develop spin-photodiode based on different semiconductors (GaAs, Ge) to enhance the polarization detection efficiency.

References:

[1] P. A. Dainone et al., “Controlling the helicity of light by electrical magnetization switching”, Nature 627, 783 (2024)

[2] A. Djeffal et al., "CoFeB/MgO/Ge spin photodiode operating at telecommunication wavelength with zero applied magnetic field", Phys. Rev. Appl. 10, 044049 (2018)

Requirements

Research Field Physics » Electronics Education Level PhD or equivalent

Research Field Physics » Condensed matter properties Education Level PhD or equivalent

Skills/Qualifications

Since the post-doc will be in charge of spin-detector growth, device fabrication as well as the photocurrent characterization, knowledge of thin film growth, e-beam lithography process as well as transport measurement are necessary. A solid training in semiconductor and spintronics physics is also necessary. Creativity, rigor, and taste for teamwork are qualities that will be highly appreciated. Good communication skills (English or French) are also required.

Languages ENGLISH Level Good

Languages FRENCH Level Basic

Research Field Physics » Electronics Years of Research Experience 1 - 4

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Institut Jean Lamour

Coordonnées :

Équipe de recrutement de Institut Jean Lamour